Date: Aug. 26th
Time: 08:30-10:00
Room: Pearl 4F
Session Chair: Prof. Kenjiro Nishikawa (Kagoshima University)
(1) Toward the Realization of the “New Silicon Island Kyushu"
--- To realize a vibrant regional economy and society with semiconductors from Kyushu ---
Mr. Yoshinori Taguchi (Kyushu Bureau of Economy, Trade and Industry)
(2) New Concept of Industry-Level Large-Scale Quantum Computer
Dr. Masahiro Horibe (The National Institute of Advanced Industrial Science and Technology)

Session 1: CMOS Amplifiers
Date: Aug. 26th
Time: 10:20-12:00
Room: Pearl 4F
Session Co-Chairs: Prof. Nobuyuki Itoh (Okayama Prefectural University, Japan) and Prof. Tian-Wei Huang (National Taiwan University, Taiwan)
(1) (Invited) Study on MOSFET's Operating Region for Fully-Integrated Sub-1-GHz LNA Under Scaling
Nobuyuki Itoh, Kiyotaka Komoku, Jun Furuta and Yasunori Suzuki (Okayama Prefectural University, Japan)
(2) (Invited) A 40.8% FBW Full D-Band Receiver Front-End Fabricated in 40 nm CMOS
Yi-Wen Wang , Shih-Chun Yeh, Kai-Jie Chuang and Tian-Wei Huang (National Taiwan University, Taiwan)
(3) A Ku-Band CMOS Power Amplifier with 37.6 % Peak PAE and 22.5 dBm P_sat for 6G Applications
Subin Lim, Wonseob Lee, Eunsu Mo and Euijin Oh (Chonnam National University, Korea); Sunwoo Kong (Electronics and Telecommunications Research Institute, Korea ); Hui Dong Lee (Electonics and Telecommunications Research Institute, Korea); Bonghyuk Park (ETRI, Korea); Seungchan Lee and Jinseok Park (Chonnam National University, Korea)
(4) A Wideband Bi-Directional Variable-Gain Amplifier with Low Phase Variation for Phased Array System
Chun-Hsiang Yang and Tzyh-Ghuang Ma (National Taiwan University of Science and Technology, Taiwan); Kun-You Lin (National Taiwan University, Taiwan)
(5) A Miniaturized 31-69 GHz Wideband Amplifier with Multi-Band Gain Tuning in 40nm CMOS
Zhen Yan, Satoshi Tanaka, Takeshi Yoshida and Minoru Fujishima (Hiroshima University, Japan)

Session 2: Device Characterization
Date: Aug. 26th
Time: 10:20-12:00
Room: Iris 4F
Session Co-Chairs: Dr. Osman Ceylan (Maury Microwave, USA) and Prof. Takuichi Hirano (Tokyo City University, Japan)
(1) (Invited) A Review of Test Fixtures for RF Device Characterization
Osman Ceylan (Maury Microwave, USA)
(2) Frequency Dependence of Complex Permittivity in Commercial Dielectric Substrates for Millimeter-Wave Circuit Design
Takashi Shimizu and Ryo Sakata (Utsunomiya University, Japan)
(3) Geometrical Optimization Approach of MSL Bend Shapes to Minimize Reflection Coefficient
Yutaka Mimino and Takuichi Hirano (Tokyo City University, Japan); Shiro Ozaki (Fujitsu Limited, Japan)
(4) A Nonlinear Rectifying Diode Modeling Approach for High-Efficiency Single-Shunt Rectifier Design
Qingkun Lyu and Kenjiro Nishikawa (Kagoshima University, Japan)
(5) A Novel Eight-Port Wave Probe for Closed-Loop Bi-Directional Reflection Coefficients
Yaun-Tzu Lee (National Yang Chiao Tung University, Taiwan); Robert (Shu-I) Hu (National Chiao Tung University, Taiwan); Ying Chen (University of California at Davis, USA)

Session 3: Si-Based Components
Date: Aug. 26th
Time: 15:50-17:30
Room: Pearl 4F
Session Co-Chairs: Dr. Tomoyuki Furuichi (Tohoku University, Japan) and Prof. Kyungsik Choi (Yonsei University, Korea)
(1) (Invited) A D-Band Low-Noise and High-Gain Receiver Front-End Adopting Gmax-Driven Active Mixer
Kyungsik Choi (Yonsei University, Korea)
(2) A 66-82 GHz VCO with Dual-Tuning and Phase Noise Reduction Techniques in 40 nm CMOS
Yi-Cheng Liu, Pei-Hsuan Wang, Yu-Yuan Huang and Tsung-Hsien Lin (National Taiwan University, Taiwan)
(3) A 5.8 dBm 55.2-67 GHz Frequency Sixtupler with 37 dB Conversion Gain in 130-nm SiGe BiCMOS
Yu Zhu (Technische Universität Dresden & Chair of Circuit Design and Network Theory, Germany); Tilo Meister and Frank Ellinger (Technische Universität Dresden, Germany)
(4) A Q-Band -3dBm Output Power Tripler Using Self-Biased anti-Parallel Diode-Connected nMOS Transistor
Ryunosuke Saito, Ryosei Miyagawa, Yuki Fujiya, Tomoyuki Furuichi and Noriharu Suematsu (Tohoku University, Japan)
(5) A Broadband Downconversion Mixer with Linearity-Improved Active IF Balun in 90-nm CMOS Process
Xin-Hao Huang, Yunshan Wang and Huei Wang (National Taiwan University, Taiwan)

Session 4: WPT and Sustainability
Date: Aug. 26th
Time: 15:50-17:30
Room: Iris 4F
Session Co-Chairs: Prof. Mamiko Inamori (Tokai University, Japan) and Prof. Tamami Maruyama (Hiroshima Institute of Technology, Japan)
(1) (Invited) Energy-Efficient Wireless Systems for Biomedical Applications
Minyoung Song (Daegu Gyeongbuk Institute of Science and Technology, Korea)
(2) (Invited) Experimental Investigation of Underwater Wireless Power Transmission System
Mamiko Inamori and Sora Anzai (Tokai University, Japan)
(3) (Invited) Effects of Metamaterial Applications on Microwave Snow Melting
Tamami Maruyama (Hiroshima Institute of Technology, Japan); Koyo Hatazawa (N.I.T Hakodate college, Japan); Kota Unyu (Muroran Institute of Technology, Japan); Masashi Nakatsugawa (National Institute of Technology, Hakodate College, Japan); Tsunayuki Yamamoto (National Institute of Technology, Tsuyama College, Japan); Keiichi Ito (National Institute of Technology, Akita College, Japan); Manabu Omiya (Hokkaido University, Japan); Noriharu Suematsu (Tohoku University, Japan)
(4) Battery-Free Smart Water Meter Powered by TV Broadcast EM Waves in Cast-Iron Box with Slit
Eiichi Tateishi (Kyushu University & Hinode Holdings Co. Ltd., Japan); Yuta Ide and Nobuhiro Kai (Hinode Holdings Ltd., Japan); Tatsuya Yamaguchi (HINODE, Ltd., Japan); Novuya Tagawa, Hayato Tanaka, Kaito Nakabuchi and Haruichi Kanaya (Kyushu University, Japan)
(5) Compact Decoupling Power Layout for High-Frequency CMOS Integrated Circuits
Yudai Miyoshi, Satoshi Tanaka, Takeshi Yoshida and Minoru Fujishima (Hiroshima University, Japan)

Session 5: Beamforming
Date: Aug. 27th
Time: 08:00-09:40
Room: Pearl 4F
Session Co-Chairs: Dr. Hiroyuki Takahashi (NTT Device Technology Laboratories, Japan) and Prof. Kyoya Takano (Tokyo University of Science, Japan)
(1) (Invited) Built-in Self Test and Calibration Techniques for Millimeter-Wave CMOS Transceivers
Ho-Jin Song (POSTECH, Korea)
(2) 1-Bit DAC for Image Enhancement of Q-Band Direct Digital RF Transmitter
Yuki Fujiya, Koki Furuuchi, Junhao Zhang, Tomoyuki Furuichi, Satoshi Tsukamoto and Noriharu Suematsu (Tohoku University, Japan)
(3) D-Band Beamforming Transceiver Modules Using Wafer-Level Packaging Technologies
Seung-Uk Choi and Sirous Bahrami (Pohang University of Science and Technology, Korea); Inho Choi (Pohang University of Science and Technology, Korea); Jiwon Kang (Pohang University of Science and Technology, Korea); Seunghoon Lee and Ho-Jin Song (POSTECH, Korea)
(4) (Invited) A Ka-Band VGA and Its Application to Four-Element Beamforming IC for LEO Satellite Communication
Hyeonwon Song, Wonseob Lee, Mingyu Lee and Hyungju Kim (Chonnam National University, Korea); Seunghun Wang and Hui Dong Lee (Electonics and Telecommunications Research Institute, Korea); Bonghyuk Park (ETRI, Korea); Seungchan Lee and Jinseok Park (Chonnam National University, Korea)
(5) A Ku-Band Beam-Steerable Linear-Polarized Transmitter with 29 dBW Peak EIRP for SATCOM Applications
Yi-Fan Tsao, Heng-Tung Hsu and Jiun-Jie Huang (National Yang Ming Chiao Tung University, Taiwan); Arpan Desai (Pandit Deendayal Energy University, India); Hao-Yu Luo and Po-Han Chen (National Yang Ming Chiao Tung University, Taiwan); Hsi-Tseng Chou (National Taiwan University, Taiwan)

Session 6: Advanced Theory and Technologies in RF to THz Devices and Antennas
Date: Aug. 27th
Time: 08:00-10:00
Room: Iris 4F
Session Co-Chairs: Dr. Satoshi Yoshida (Ryukoku University, Japan) and Prof. Chung-Tse Michael Wu (National Taiwan University, Taiwan)
(1) (Invited) Signal-Flow-Graph Representation of Weakly Nonlinear Networks and Its Applications
Shuhei Amakawa (Hiroshima University, Japan)
(2) (Invited) Reflection-Mode Terahertz Imaging Using Concurrent Transceiver Pixel Arrays in CMOS
Wooyeol Choi (Seoul National University, Korea); Kenneth O (The University of Texas at Dallas, USA)
(3) A 0.35-THz Binary Coding Metasurface Using Glass Integrated Passive Device Technology
Shuping Li (Rutgers University, USA); Te-Yen Chiu (National Tsing Hua University, Taiwan); Chun-Hsing Li (National Taiwan University, Taiwan); Chung-Tse Michael Wu (Rutgers University, USA)
(4) (Invited) Smith Chart-Based Graphical Design of a Two-Section Transmission Line Matching Circuits
Satoshi Tanaka, Takeshi Yoshida and Minoru Fujishima (Hiroshima University, Japan)
(5) (Invited) 600-GHz Scalable Modular CMOS Detector Arrays with Stitched Multiple Chips
Jae-Sung Rieh (Korea University, Korea); Doyoon Kim (Samsung Electronics, Korea); Minje Cho (Anapass, Korea)
(6) An in-Line Coupling Based Microstrip Filtering Antenna Array with Transmission Zeros
Masataka Ohira (Doshisha University, Japan); Chiharu Ikeda and Zhewang Ma (Saitama University, Japan); Hiroyuki Deguchi (Doshisha University, Japan)

Session 7: Active Devices and Components
Date: Aug. 27th
Time: 10:20-12:00
Room: Pearl 4F
Session Co-Chairs: Prof. Ryo Ishikawa (The University of Electro-Communications, Japan) and Prof. Shinji Hara (Nagoya University, Japan)
(1) (Invited) Gain Drop Analysis of Electrically Long Gate Finger FETs and Its Improving Method
Shinji Hara and Keiichi Sakuno (Nagoya University, Japan)
(2) (Invited) High Output Power and Efficiency GaN and InP-Based HEMTs for Sub-THz Power Amplifiers
Toshihiro Ohki, Shiro Ozaki, Yusuke Kumazaki, Atsushi Yamada, Masaru Sato and Yasuhiro Nakasha (Fujitsu Limited, Japan)
(3) (Invited) Multistage 5.75-GHz High-Efficiency and High-Gain Amplifier as DC-RF Power Converter for SSPS
Ryo Ishikawa (The University of Electro-Communications, Japan)
(4) A Highly Efficient Dual-Band Rectenna with a Double-Loop Antenna for Low Power Operation
Taiki Hirase, Naoki Sakai and Kenji Itoh (Kanazawa Institute of Technology, Japan); Takeshi Yamagishi, and Satoshi Furuta (Samsung R&D Institute Japan, Japan)
(5) Linearly Controllable Infinite Phase Shifter Using Current Output DACs with Tapped Load Resistors
Fuka Kamei, Asaka Kobayashi and Hideyuki Nosaka (Ritsumeikan University, Japan)

Session 8: Quantum Computing and Sensing
Date: Aug. 27th
Time: 10:20-12:00
Room: Iris 4F
Session Co-Chairs: Dr. Akinori Taira (Mitsubishi Electric Corporation, Japan) and Dr. Hiroyuki Kayano (Advanced Industrial Science and Technology, Japan)
(1) (Invited) An Introduction to Superconducting Quantum Computer for Microwave Engineers
Hidehisa Shiomi (Osaka University, Japan)
(2) (Invited) Terahertz Wave Sensing Technology for Visualizing Hidden Objects
Akinori Taira, Michiya Hayama, Kazuaki Ishioka, Satoshi Yoshima, Ichiro Somada and Akihito Hirai (Mitsubishi Electric Corporation, Japan)
(3) A Cryogenic Up-Conversion Single Sideband IQ Mixer for Quantum Computing
Yu-Shih Lin (National Taiwan University, Taiwan); Che-Hao Li (Industrial Technology Research Institute, Taiwan); Mian-Yu Wu (National Taiwan University, Taiwan); Chang-Sheng Chen and Shyh-Shyuan Sheu (Industrial Technology Research Institute, Taiwan); Yih-Peng Chiou (National Taiwan University, Taiwan)
(4) Wideband Noise Spectroscopy of Very Shallow States in Cryogenic MOSFETs
Kenji Ohmori (Device Lab Inc., Japan); Shuhei Amakawa (Hiroshima University, Japan); Michihiro Shintani and Kazutoshi Kobayashi (Kyoto Institute of Technology, Japan)
(5) A Sub-THz Inductive Source Degeneration Harmonic Oscillator Using 0.12-Um GaN HEMT Technology
Jiayou Wang (University of Liverpool, United Kingdom (Great Britain) & National Tsing Hua University, Taiwan); Yin-Cheng Chang (Taiwan Semiconductor Research Institute, NIAR, Taiwan); Da-Chiang Chang (Chip Implementation Center, National Applied Research Laboratories, Taiwan); Shawn S. H. Hsu (National Tsing Hua University, Taiwan)

Session 9: GaN/Power Amplifiers
Date: Aug. 27th
Time: 15:50-17:30
Room: Pearl 4F
Session Co-Chairs: Dr. Kazuya Yamamoto (Mitsubishi Electric Corporation, Japan) and Prof. Yasunori Suzuki (Okayama Prefectural University, Japan)
(1) (Invited) High-Efficiency Wideband GaN Power Amplifier MMICs for 6G and SATCOM
Takuma Torii, and Shintaro Shinjo (Mitsubishi Electric Corporation, Japan); Chenhao Chu, and Hua Wang (ETH Zurich, Switzerland)
(2) (Invited) Extremely Low Power Consumption of Linear Power Amplifier for Base Station
Yasunori Suzuki (Okayama Prefectural University, Japan)
(3) An X-Band over 250 W GaN-on-GaN HEMT Power Amplifier with PAE of Higher than 50%
Kenji Mukai, Jun Kamioka, Shintaro Shinjo, Tsutomu Matsuura, Shingo Tomohisa, and Yagyu Eiji (Mitsubishi Electric Corporation, Japan)
(4) A Low Noise High Gain Amplifier MMIC for Wideband Satellite Application
Zhijian Chen, Yang Li, Fengyuan Mao, Bin Li, Zhao Hui Wu and Quansheng Guan (South China University of Technology, China); Xiaoling Lin (China Electronic Product Reliability and Environmental Testing Research Institut, China)
(5) A Ku-Band GaN MMIC Power Amplifier with a 47.4% Large-Signal Fractional Bandwidth
Tsai-Rung Hu (National Tsing Hua University, Taiwan); Hsin-Chieh Lin (Taiwan Semiconductor Research Institute, Taiwan); Yin-Cheng Chang and Da-Chiang Chang (Taiwan Semiconductor Research Institute, NIAR, Taiwan); Shawn S. H. Hsu (National Tsing Hua University, Taiwan)

Session 10: Sub-THz Experiments and Devices
Date: Aug. 27th
Time: 15:50-17:30
Room: Iris 4F
Session Co-Chairs: Prof. Hiroshi Okazaki (Tokyo Information Design Professional University) and Prof. Hideyuki Nosaka (Ritsumeikan University, Japan)
(1) (Invited) 160-Gb/s RF Front-End and Metasurface Beamforming: Toward Practical Wireless Systems at 300 GHz
Hiroyuki Takahashi, Hiroshi Hamada, Adam Pander and Teruo Jyo (NTT Device Technology Laboratories, Japan)
(2) (Invited) Experimental Demonstrations of Long-Range Wireless Communication Using the 100 GHz Band
Tetsuya Kawanishi (Waseda University & National Institute of Information and Communications Technology, Japan)
(3) 28 GHz Direct-Conversion Transmitter with I/Q Imbalance Correction
Seunghoon Lee, Inho Choi and Sangcheol Jeon (POSTECH, Korea); Sungbeom Kim (Samsung Electronics, Korea); Donghun Lee (LIG Nex1, Korea); Ho-Jin Song (POSTECH, Korea)
(4) A Low-Loss High-Isolation Crossover Design for D-Band Phased Arrays
Leshan Xu, Satoshi Tanaka, Takeshi Yoshida and Minoru Fujishima (Hiroshima University, Japan)
(5) Beam Steering Characteristics of a 300 GHz Stretchable RIS with Dual-Polarization Capability
Eiru Morimoto and Kento Seki (The University of Osaka, Japan); Yuto Kato (National Institute of Advanced Industrial Science and Technology, Japan); Yosuke Nakata and Atsushi Sanada (The University of Osaka, Japan)

Poster Sessions

Date: Aug. 26th
Time: 13:50-15:10
Room: Pearl 4F Foyer
Session Co-Chairs: Dr. Shintaro Shinjo (Mitsubishi Electric Corporation, Japan) and Prof. Yasunori Suzuki (Okayama Prefectural University, Japan)
(1) Multi-Path Fading Measurement of 2.4 GHz/5 GHz Band with Real-Time Wideband Spectrum Monitor
Tomoyuki Furuichi, Eisai Nagahari, Takashi Shiba and Noriharu Suematsu (Tohoku University, Japan)
(2) An Indoor Positioning Method Based on Distributed Single-Frequency Continuous Wave Radars
Ruoxi Cai, Yue Yu and Lixin Ran (Zhejiang University, China)
(3) An Approach for Estimation of Soil Moisture Content Using Coil at HF Band
Natsuki Sato, Takato Shinhama and Futoshi Kuroki (National Institute of Technology, Kure College, Japan)
(4) A 35% Radiation Efficiency W-Band H-Shaped on-Chip Slot Antenna
Yu-Shao Shiao, Jia-Bin Qian, Wen-Lin Chen and Kun-Ming Chen (Taiwan Semiconductor Research Institute, Taiwan); Guo-Wei Huang (Taiwan Semiconductor Research Institute & National Yang Ming Chiao Tung University, Taiwan)
(5) Derivation of Forward and Reverse Loop Gains for Closed-Loop Circuit Stability Analysis
Yaun-Tzu Lee (National Yang Chiao Tung University, Taiwan); Robert (Shu-I) Hu (National Chiao Tung University, Taiwan); Ying Chen (University of California at Davis, USA)
(6) Grounded CPW with a Longitudinal Slot at Bottom Ground for Low Loss at the Sub-THz Band on Glass IPD
Ruei-Ze Lin, Zhi-Ting Yang and Hsin-Chia Lu (National Taiwan University, Taiwan)
(7) Recent Experiments on Switchable Reflective Polarizer in Conformal Configuration
Dwi Andi Nurmantris (Telkom University, Indonesia); Sabrina Megumi Ahmad (Inha University, Korea) & Wireless Communication Research Laboratory, Korea)); Achmad Munir (Institut Teknologi Bandung, Indonesia)
(8) A Study on Dispersion Characteristics of a Gyrator-Loaded CRLH-TL with an Even Number of Unit Cells
Kensuke Okubo, Mitsuyoshi Kishihara and Koichiro Sakaguchi (Okayama Prefectural University, Japan)
(9) Four 2-D Rhombic Distributed TL Models Related by 90-Degree Rotations for Topological Waveguides
Tsutomu Nagayama (Kagoshima University, Japan)
(10) Full D-Band Waveguide-to-Microstrip Transitions on Low-Cost PCBs
Chi-An Lin and Yu-Hsiang Cheng (National Taiwan University, Taiwan)
(11) Low-Power Miniaturized Wideband Quadrature Differential Power Detector
Xiao Tan (Sanechips Technology Co. Ltd, China); Jian Fu and Jianqiang Zhang (Sanechips, China); Jie Yang (Sanechips Technology Co. Ltd, China); Jie Hu (Sanechips Technology Co., Ltd, China & State Key Lavoratory of Mobile Network and Mobile Multimedia Technology, China); Guangxiang Zhang, and Qi Xiao (Sanechips Technology Co. Ltd, China); Jinjie Zhang (Sanechips, China)

Date: Aug. 27th
Time: 13:50-15:10
Room: Pearl 4F Foyer
Session Co-Chairs: Dr. Shintaro Shinjo (Mitsubishi Electric Corporation, Japan) and Prof. Yasunori Suzuki (Okayama Prefectural University, Japan)
(1) A D-Band down-Conversion Mixer Using Transformer-Coupling Cascode Topology in 40-nm CMOS
Jin-Hui Li, Chung-Yao Lu, Yi-Qi Lin and Yu-Hsiang Cheng (National Taiwan University, Taiwan)
(2) Sub-6GHz Band Frequency Synthesizer with Automatic Frequency Calibration Technique
Xin-Yu Chang (National Taipei University, Taiwan); Yue-Fang Kuo (Yuan Ze University, Taiwan)
(3) Subharmonic Injection-Locked Push-Push Oscillator Using Two-Wavelength Ring Resonator
Elton De Nascimento Lima, Takayuki Tanaka and Ichihiko Toyoda (Saga University, Japan)
(4) System and Circuit Level Design Aspects of mmWave SPDT Switches on CMOS SOI
Mikko Hietanen and Aarno Pärssinen (University of Oulu, Finland)
(5) Broadband GaAs-mHEMT LNA and DA Design for Fusion Hot-Electron Plasma Detection
Yaun-Tzu Lee, National Yang Chiao Tung University, Taiwan
(6) GaN HEMT Low Noise Amplifier with an 8 Shaped Inductor for 5G Application
Sheng-Lyang Jang, National Taiwan University of Science and Technology, Taiwan
(7) Design and Implementation of CMOS Negative Capacitors for X-Band Applications
Nikita Kalmykov, Saint Petersburg Electrotechnical University, Russia
(8) A 23-33 GHz GaN HEMT LNA with High Linearity for UAV Radar Applications
Yuan-Hung Huang, Shao-Chun Huang and Chao-Hsin Wu (National Taiwan University, Taiwan)
(9) A 0.8-V 80.7-GHz Dual-Core-Coupled Triple-Mode VCO in 40-nm CMOS
Yu-Yuan Huang, Pei-Hsuan Wang, Yi-Cheng Liu and Tsung-Hsien Lin (National Taiwan University, Taiwan)
(10) Broadband X-Band GaN MMIC High Power Amplifier and Driver Amplifier Chipset
Kento Saiki (Mitsubishi Electric, Japan)
(11) A Ka-Band CMOS Switchless Low-Noise High-Responsivity Receiver for Sensing Applications
Yu-Chia Su, Yi-Fu Chen and Hong-Yeh Chang (National Central University, Taiwan)
(12) A 47 GHz-Bandwidth/47 mW LO-Split Up-Conversion Mixer for 300-GHz Self-Heterodyne Transceivers
Taiga Noguchi and Kyoya Takano (Tokyo University of Science, Japan)
(13) Microwave Characterization CPW Lines Using Copper Ink Based Printed Electronics
Shin Yokomura and Daisuke Yasunobu (Kagoshima University, Japan); Hiroto Sakaki (Mitsubishi Electric Corporation, Japan); Kenjiro Nishikawa (Kagoshima University, Japan)
(14) Characterization of Transmission Properties of Infrared Filters and Attenuators Up to 125 GHz
Junta Igarashi, Kosuke Mizuno, Ryo Ito, Shota Norimoto, Toyofumi Ishikawa, Kunihiro Inomata, Noriyoshi Hashimoto, Nobu-hisa Kaneko and Tomonori Arakawa (National Institute of Advanced Industrial Science and Technology, Japan)
(15) A 96-GHz 15.9-dB Gain 20.7 dBm PSAT Power Amplifier in 60-nm GaN-on-Si HEMT
Tsai-Rung Hu (National Tsing Hua University, Taiwan); Hsin-Chieh Lin (Taiwan Semiconductor Research Institute, Taiwan); Yin-Cheng Chang and Da-Chiang Chang (Taiwan Semiconductor Research Institute, NIAR, Taiwan); Shawn S. H. Hsu (National Tsing Hua University, Taiwan)
(16) A Method for Reducing Learning Time in ARVTDNN for NN-DPD Applications
Yudai Shiota (Kagoshima University, Japan); Hiroto Sakaki (Mitsubishi Electric Corporation, Japan); Kenjiro Nishikawa (Kagoshima University, Japan)



Date: Aug. 27th
Time: 18:00
Room: Pearl 4F
Session Co-Chairs: Dr. Shintaro Shinjo (Mitsubishi Electric Corporation, Japan) and Prof. Yasunori Suzuki (Okayama Prefectural University, Japan)
(1) Award Ceremony
(2) Introduction of the RFIT 2026
(3) Closing Remarks